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| Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-33143 Features * Low Noise Figure * Excellent Uniformity in Product Specifications * Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) * Tape-and-Reel Packaging Option Available Surface Mount Package SOT-343 Description Agilent's ATF-33143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-33143 is suitable for applications in cellular and PCS base stations, LEO systems, MMDS, and other systems requiring super low noise figure with good intercept in the 450 MHz to 10 GHz frequency range. Pin Connections and Package Marking Specifications * 0.5 dB Noise Figure * 15 dB Associated Gain * 22 dBm Output Power at 1 dB Gain Compression * 33.5 dBm Output 3 Order Intercept rd SOURCE 3Px 1.9 GHz; 4V, 80 mA (Typ.) DRAIN SOURCE GATE Note: Top View. Package marking provides orientation and identification. "3P" = Device code "x" = Date code character. A new character is assigned for each month, year. Applications * Low Noise Amplifier and Driver Amplifier for Cellular/PCS Base Stations * LNA for WLAN, WLL/RLL, LEO, and MMDS Applications * General Purpose Discrete PHEMT for Other Ultra Low Noise Applications ATF-33143 Absolute Maximum Ratings[1] Symbol VDS VGS VGD IDS Pdiss Pin max TCH TSTG jc Parameter Drain - Source Voltage [2] Gate - Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Total Power Dissipation [4] RF Input Power Channel Temperature [5] Storage Temperature Thermal Resistance [6] Units V V V mA mW dBm C C C/W Absolute Maximum 5.5 -5 -5 Idss [3] 600 20 160 -65 to 160 145 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiesent conditions. 3. VGS = 0 V 4. Source lead temperature is 25C. Derate 6 mW/ C for TL > 60C. 5. Please refer to failure rates in reliability section to assess the reliability impact of running devices above a channel temperature of 140C. 6. Thermal resistance measured using 150C Liquid Crystal Measurement method. Product Consistency Distribution Charts [8, 9] 500 +0.6 V 120 100 80 Cpk = 1.7 Std = 0.05 400 IDS (mA) 300 0V -3 Std 60 +3 Std 200 40 100 -0.6 V 20 0 0.2 0 0 2 4 VDS (V) 6 8 0.3 0.4 0.5 NF (dB) 0.6 0.7 0.8 Figure 1. Typical Pulsed I-V Curves [7]. (VGS = -0.2 V per step) 100 Cpk = 1.21 Std = 0.94 Figure 2. NF @ 2 GHz, 4 V, 80 mA. LSL=0.2, Nominal=0.53, USL=0.8 120 100 80 Cpk = 2.3 Std = 0.2 80 60 -3 Std +3 Std 60 -3 Std +3 Std 40 40 20 20 0 29 31 33 OIP3 (dBm) 35 37 0 13 14 15 GAIN (dB) 16 17 Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA. LSL=30.0, Nominal=33.3, USL=37.0 Figure 4. Gain @ 2 GHz, 4 V, 80 mA. LSL=13.5, Nominal=14.8, USL=16.5 Notes: 7. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the maximum Pdiss and Pin max ratings are not exceeded. 8. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 10. The probability of a parameter being between 1 is 68.3%, between 2 is 95.4% and between 3 is 99.7%. ATF-33143 DC Electrical Specifications TA = 25C, RF parameters measured in a test circuit for a typical device Symbol Idss [1] VP [1] Id gm[1] IGDO Igss NF Parameters and Test Conditions Units Min. Typ.[2] Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 175 237 Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss V -0.65 -0.5 Quiescent Bias Current VGS = -0.5 V, VDS = 4 V mA -- 80 Transconductance VDS = 1.5 V, gm = Idss /VP mmho 360 440 Gate to Drain Leakage Current VGD = 5 V A Gate Leakage Current VGD = VGS = -4 V A -- 42 f = 2 GHz VDS = 4 V, IDS = 80 mA dB 0.5 VDS = 4 V, IDS = 60 mA 0.5 Noise Figure f = 900 MHz VDS = 4 V, IDS = 80 mA dB 0.4 VDS = 4 V, IDS = 60 mA 0.4 f = 2 GHz VDS = 4 V, IDS = 80 mA dB 13.5 15 VDS = 4 V, IDS = 60 mA 15 Associated Gain[3] f = 900 MHz VDS = 4 V, IDS = 80 mA dB 21 VDS = 4 V, IDS = 60 mA 21 f = 2 GHz VDS = 4 V, IDS = 80 mA dBm 30 33.5 5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA 32 rd Order Output 3 [3] Intercept Point f = 900 MHz VDS = 4 V, IDS = 80 mA dBm 32.5 5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA 31 f = 2 GHz VDS = 4 V, IDS = 80 mA dBm 22 VDS = 4 V, IDS = 60 mA 21 1 dB Compressed Compressed Power [3] f = 900 MHz VDS = 4 V, IDS = 80 mA dBm 21 VDS = 4 V, IDS = 60 mA 20 Max. 305 -0.35 -- -- 1000 600 0.8 16.5 Ga OIP3 P1dB Notes: 1. Guaranteed at wafer probe level. 2. Typical value determined from a sample size of 450 parts from 9 wafers. 3. Measurements obtained using production test board described in Figure 5. Input 50 Ohm Transmission Line Including Gate Bias T (0.5 dB loss) Input Matching Circuit _mag = 0.20 _ang = 124 (0.3 dB loss) DUT 50 Ohm Transmission Line Including Drain Bias T (0.5 dB loss) Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. ATF-33143 Typical Performance Curves 40 40 2V 3V 4V OIP3, IIP3 (dBm) 20 OIP3, IIP3 (dBm) 2V 3V 4V 30 30 20 10 10 0 0 20 40 60 IDSQ (mA) 80 100 120 0 0 20 40 60 IDSQ (mA) 80 100 120 Figure 6. OIP3, IIP3 vs. Bias [1] at 2GHz. 25 Figure 7. OIP3, IIP3 vs. Bias [1] at 900 MHz. 25 20 20 P1dB (dBm) 15 P1dB (dBm) 2V 3V 4V 15 10 10 5 5 2V 3V 4V 0 0 20 40 60 IDSQ (mA) 80 100 120 0 0 20 40 60 IDSQ (mA) 80 100 120 Figure 8. P1dB vs. Bias [1,2] at 2 GHz. Figure 9. P1dB vs. Bias [1,2] Tuned for NF @ 4V, 80mA at 900MHz. 1.4 1.2 1.0 0.8 0.6 22 21 1.2 1.0 0.8 Ga 19 18 17 16 0 20 40 60 IDSQ (mA) 80 100 NF 16 15 Ga 14 NOISE FIGURE (dB) 20 13 12 11 10 0 20 40 60 IDSQ (mA) 80 100 0.6 0.4 2V 3V 4V NF 2V 3V 4V 0.4 0.2 120 0.2 0 120 Figure 10. NF and Ga vs. Bias [1] at 2GHz. Figure 11. NF and Ga vs. Bias [1] at 900 MHz. Notes: 1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. NOISE FIGURE (dB) Ga (dB) Ga (dB) ATF-33143 Typical Performance Curves, continued 1.5 80 mA 60 mA 30 25 20 Ga (dB) 80 mA 60 mA 1.0 Fmin (dB) 15 10 5 0.5 0 0 2 4 6 8 10 FREQUENCY (GHz) 0 0 2 4 6 8 10 FREQUENCY (GHz) Figure 12. Fmin vs. Frequency and Current at 4V. 25 25C -40C 85C Figure 13. Associated Gain vs. Frequency and Current at 4V. 2.0 40 25C -40C 85C P1dB, OIP3 (dBm) 20 Ga (dB) 1.5 NOISE FIGURE (dB) 35 30 15 1.0 25 10 0.5 20 5 0 2 4 6 8 FREQUENCY (GHz) 0 10 15 0 2000 4000 6000 8000 FREQUENCY (MHz) Figure 14. Fmin and Ga vs. Frequency and Temp at V DS = 4V, I DS = 80mA. 35 OIP3, P 1dB (dBm), GAIN (dB) Figure 15. P1dB, OIP3 vs. Frequency and Temp at V DS = 4V, I DS = 80mA. 35 OIP3, P 1dB (dBm), GAIN (dB) 3.5 P1dB OIP3 Gain NF 30 25 20 15 10 5 0 0 20 40 60 IDSQ (mA) 80 3.0 NOISE FIGURE (dB) 30 25 20 15 10 5 0 0 20 40 60 IDSQ (mA) 80 100 P1dB OIP3 Gain NF 3 NOISE FIGURE (dB) 2.5 2.0 1.5 1.0 0.5 2 1 100 0 120 0 120 Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1,2] at 3.9 GHz. Figure 17. OIP3, P1dB, NF and Gain vs. Bias [1,2] at 5.8 GHz. Notes: 1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. ATF-33143 Typical Performance Curves, continued 25 25 20 P1dB (dBm) P1 dB (dBm) 20 15 15 10 10 5 5 0 0 20 40 60 IDS (mA) 80 100 120 0 0 20 40 60 IDS (mA) 80 100 120 Figure 18. P1dB vs. IDS Active Bias [1] Tuned for NF @ 4 V, 80 mA at 2 GHz. Figure 19. P1dB vs. IDS Active Bias [1] Tuned for NF @ 4 V, 80 mA at 900 MHz. Note: 1. Measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA Freq (GHz) 0.9 1.5 1.8 2.0 4.0 6.0 P1dB (dBm) 20.7 21.2 21.1 21.6 23.0 24.0 Id (mA) 89 91 80 81 97 130 G1dB (dB) 23.2 20.7 19.2 18.1 11.9 5.9 PAE1dB (%) 33 36 40 44 48 36 P3dB (dBm) 23.2 23.8 23.0 23.2 24.6 25.2 Id (mA) 102 116 94 89 135 136 PAE3dB Out_mag Out_ang (%) (Mag.) () 51 51 52 57 48 36 0.39 0.43 0.43 0.42 0.40 0.37 160 165 170 174 -150 -124 70 60 Pout (dBm), G (dB), PAE (%) 50 40 30 20 10 0 -10 -20 -40 -30 Pout Gain PAE -20 -10 0 10 20 Pin (dBm) Figure 20. Swept Power Tuned for Max P1dB VDS =4V, I DSQ = 80 mA, 2 GHz. Notes: 1. Measurements made on ATN LP1 power load pull system. 2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. 3. PAE (%) = ((Pout - Pin) / Pdc) X 100 4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device. ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA Freq. (GHz) 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. Ang. 0.86 0.77 0.76 0.73 0.72 0.72 0.72 0.73 0.74 0.75 0.77 0.79 0.82 0.83 0.86 0.88 0.90 0.91 0.91 0.92 0.93 0.94 0.93 -75.60 -115.00 -122.50 -151.80 -164.60 -171.80 171.00 158.20 136.50 117.00 98.00 80.20 64.70 50.60 36.60 21.80 7.50 -4.80 -15.40 -27.30 -40.40 -52.20 -61.20 dB 23.20 20.44 19.80 16.97 15.54 14.67 12.79 11.18 8.76 6.99 5.47 3.94 2.45 1.27 0.37 -0.72 -1.97 -3.45 -4.69 -5.70 -6.52 -7.51 -8.78 S21 Mag. 14.45 10.53 9.77 7.06 5.99 5.41 4.36 3.62 2.74 2.24 1.88 1.57 1.33 1.16 1.04 0.92 0.80 0.67 0.58 0.52 0.47 0.42 0.36 Ang. 132.90 109.80 105.30 87.50 79.20 74.20 62.70 53.00 35.20 17.50 -1.00 -19.00 -34.90 -49.10 -64.30 -80.40 -96.20 -110.80 -122.80 -135.40 -148.30 -162.10 -172.80 dB -28.18 -25.35 -25.04 -23.61 -22.97 -22.73 -21.94 -21.31 -20.00 -18.86 -17.99 -17.52 -17.39 -17.08 -16.54 -16.48 -16.71 -17.27 -17.65 -17.79 -17.72 -17.92 -18.56 S12 Mag. 0.039 0.054 0.056 0.066 0.071 0.073 0.080 0.086 0.100 0.114 0.126 0.133 0.135 0.140 0.149 0.150 0.146 0.137 0.131 0.129 0.130 0.127 0.118 Ang. 54.80 42.20 40.20 33.20 30.60 28.90 25.10 21.60 13.70 3.40 -8.90 -22.30 -33.60 -43.40 -55.20 -68.40 -81.10 -92.90 -101.60 -111.60 -122.20 -134.70 -143.30 S22 Mag. Ang. 0.26 0.34 0.35 0.39 0.41 0.42 0.45 0.47 0.49 0.50 0.51 0.54 0.57 0.60 0.63 0.66 0.70 0.73 0.76 0.79 0.81 0.82 0.84 -118.50 -150.00 -155.50 -176.10 175.00 169.80 160.60 152.70 139.90 125.70 109.10 91.60 75.90 63.70 52.00 38.50 22.50 6.70 -5.20 -15.20 -25.10 -37.30 -49.20 MSG/MAG (dB) 25.69 22.90 22.42 20.29 19.26 18.70 17.36 16.25 10.91 9.78 9.03 8.44 7.78 7.42 7.68 7.61 7.44 6.46 5.86 5.65 5.65 5.44 4.17 ATF-33143 Typical Noise Parameters VDS = 4 V, IDS = 60 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.29 0.42 31.40 0.9 0.33 0.33 44.70 1.0 0.34 0.32 48.00 1.5 0.38 0.26 71.90 1.8 0.39 0.22 94.00 2.0 0.42 0.22 109.70 2.5 0.47 0.25 149.40 3.0 0.51 0.29 166.80 4.0 0.63 0.39 -160.60 5.0 0.72 0.46 -135.30 6.0 0.82 0.51 -112.40 7.0 0.93 0.57 -90.90 8.0 1.03 0.61 -71.80 9.0 1.13 0.66 -55.50 10.0 1.22 0.69 -41.80 Rn/50 0.080 0.070 0.070 0.060 0.050 0.046 0.030 0.030 0.040 0.060 0.110 0.210 0.370 0.550 0.720 Ga dB 25.91 21.80 21.00 18.14 16.96 16.29 14.95 13.58 11.74 10.36 9.17 8.18 7.19 6.56 6.29 30 25 20 15 10 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) |S21|2 MSG/MAG and |S 21|2 (dB) MSG MAG Figure 22. MSG/MAG and |S21| 2 vs. Frequency at 4V, 60 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 80 mA Freq. (GHz) 0.5 0.9 1.0 1.5 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. Ang. 0.86 0.77 0.76 0.72 0.72 0.72 0.73 0.74 0.75 0.77 0.79 0.82 0.84 0.86 0.88 0.90 0.91 0.91 0.92 0.93 0.94 0.93 -76.90 -115.90 -123.20 -151.70 -171.10 170.10 157.40 135.90 116.60 97.60 80.00 64.50 50.50 36.40 21.60 7.40 -4.90 -15.50 -27.40 -40.50 -52.30 -61.30 dB 23.48 20.64 20.00 17.13 14.82 12.96 11.36 8.92 7.15 5.63 4.09 2.61 1.42 0.52 -0.57 -1.81 -3.30 -4.54 -5.51 -6.34 -7.33 -8.61 S21 Mag. 14.93 10.77 10.00 7.18 5.51 4.45 3.70 2.79 2.28 1.91 1.60 1.35 1.18 1.06 0.94 0.81 0.68 0.59 0.53 0.48 0.43 0.37 Ang. 132.10 109.10 104.80 87.40 74.30 62.60 52.90 35.40 17.70 -0.70 -18.60 -34.40 -48.60 -63.70 -79.80 -95.50 -110.00 -122.00 -134.50 -147.40 -161.20 -171.90 dB -28.64 -25.85 -25.51 -24.01 -22.97 -22.27 -21.51 -20.09 -18.86 -17.99 -17.52 -17.33 -17.02 -16.48 -16.42 -16.59 -17.20 -17.59 -17.65 -17.65 -17.86 -18.49 S12 Mag. 0.037 0.051 0.053 0.063 0.071 0.077 0.084 0.099 0.114 0.126 0.133 0.136 0.141 0.150 0.151 0.148 0.138 0.132 0.131 0.131 0.128 0.119 Ang. 55.40 43.90 42.10 36.00 32.10 28.10 24.60 16.40 5.70 -6.90 -20.60 -32.00 -42.10 -54.00 -67.30 -80.20 -92.00 -100.80 -110.80 -121.50 -134.00 -142.90 S22 Mag. Ang. 0.26 0.34 0.35 0.39 0.43 0.45 0.47 0.49 0.50 0.52 0.54 0.57 0.61 0.64 0.67 0.71 0.74 0.76 0.79 0.81 0.82 0.84 -126.60 -155.50 -160.50 -180.00 166.60 158.70 151.20 138.70 124.70 108.30 91.00 75.30 63.10 51.50 38.00 22.00 6.40 -5.60 -15.50 -25.40 -37.60 -49.50 MSG/MAG (dB) 26.06 23.25 22.76 20.57 18.90 17.62 16.44 10.67 9.78 9.05 8.50 7.88 7.53 7.78 7.72 7.59 6.55 5.97 5.76 5.78 5.57 4.30 ATF-33143 Typical Noise Parameters VDS = 4 V, IDS = 80 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.30 0.40 28.20 0.9 0.35 0.31 44.10 1.0 0.36 0.30 47.40 1.5 0.40 0.23 79.10 2.0 0.46 0.22 117.00 2.5 0.52 0.26 157.70 3.0 0.58 0.29 171.10 4.0 0.69 0.39 -157.20 5.0 0.80 0.46 -132.40 6.0 0.90 0.52 -109.40 7.0 1.02 0.57 -88.80 8.0 1.12 0.63 -70.50 9.0 1.21 0.66 -54.10 10.0 1.32 0.76 -40.40 Rn/50 0.080 0.070 0.070 0.050 0.050 0.040 0.040 0.044 0.070 0.130 0.250 0.420 0.630 0.830 Ga dB 25.77 21.91 21.14 18.46 16.56 15.23 13.79 11.92 10.53 9.37 8.33 7.41 6.70 6.69 30 25 20 15 10 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) |S21|2 MSG/MAG and |S 21|2 (dB) MSG MAG Figure 23. MSG/MAG and |S21| 2 vs. Frequency at 4V, 80 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50, to an impedance represented by the reflection coefficient o. The designer must design a matching network that will present o to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with o. If the reflection coefficient of the matching network is other than o, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |s - o | 2 Zo (|1 + o| 2) (1 - s| 2) Where Rn /Zo is the normalized noise resistance, o is the optimum reflection coefficient required to produce Fmin and s is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower o as compared to narrower gate width devices. Typically for FETs, the higher o usually infers that an impedance much higher than 50 is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Application 1085. Reliability Data Nominal Failures per million (FPM) for different durations Channel Temperature (oC) 100 125 140 150 160 (FITs) 1000 hours <0.1 <0.1 <0.1 <0.1 <0.1 1 year 5 year 10 year 30 year 90% confidence Failures per million (FPM) for different durations (FITs) 1000 hours <0.1 <0.1 <0.1 <0.1 <0.1 1 year 5 year 10 year 30 year <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 2 920 <0.1 <0.1 <0.1 140 21K <0.1 <0.1 160 26K 370K <0.1 <0.1 <0.1 0.3 67 <0.1 <0.1 6 780 24K <0.1 <0.1 160 8800 120K <0.1 11 9.3K 131K 520K 180 <0.1 4400 450K 830K 1000K 21 53K 590K 850K 1000K NOT recommended Predicted failures with temperature extrapolated from failure distribution and activation energy data of higher temperature operational life STRIFE of PHEMT process ATF-33143 Die Model Statz Model MESFETM1 NFET=yes PFET=no Vto=-0.95 Beta=0.48 Lambda=0.09 Alpha=4 B=0.8 Tnom=27 Idstc= Vbi=0.7 Tau= Betatce= Delta1=0.2 Delta2= Gscap=3 Cgs=1.6 pF Gdcap=3 Cgd=0.32 pF Rgd= Tqm= Vmax= Fc= Rd=.125 Rg=1 Rs=0.0625 Ld=0.00375 nH Lg-0.00375 nH Ls=0.00125 nH Cds=0.08 pF Crf=0.1 Rc=62.5 Gsfwd=1 Gsrev=0 Gdfwd=1 Gdrev=0 Vjr=1 Is=1 nA Ir=1 nA Imax=0.1 Xti= N= Eg= Vbr= Vtotc= Rin= Taumd1=no Fnc=1E6 R=0.17 C=0.2 P=0.65 wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= Al lParams= This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements Agilent reserves the right to change these models without prior notice. ATF-33143 Model INSIDE Package Var Ean VAR VAR1 K=5 Z2=85 Z1=30 C C1 C=0.1 pF GATE Port G Num=1 VIA2 V1 D=20 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40 mil TLINP TL4 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=D 0000 F=1 GHz TanD=0.001 L L1 L=0.6 nH R=0.001 GaAsFET FET1 Model=MESFETN1 Mode=nonlinear TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 L L6 L=0.2 nH R=0.001 C C2 C=0.11 pF L L7 C=0.6 nH R=D 001 TLINP TL7 Z=Z2/2 Ohm L=5.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 VIA2 V3 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil SOURCE TLINP TL8 Z=Z1 Ohm L=15 mil K=1 A=0.0000 F=1 GHz TanD=0.001 TLINP TL6 Z=Z1 Ohm L=15 mil K=1 A=0.0000 F=1 GHz TanD=0.001 Port S2 Num=4 TLINP TL3 Z=Z2 Ohm L=25 mil K=K A=0.000 F=1 GHz TanD=0.001 SOURCE VIA2 V4 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil DRAIN Port D Num=4 Port S1 Num=2 VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil TLINP TL10 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINPTL9 Z=Z2 Ohm L=10.0 mil K=K A=0.000 F=1 GHz TanD=0.001 L L4 L=0.2 nH R=0.001 MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1 DE+50 Hu=3.9e+0.34 mil T=0.15 mil TanD=D Rough=D mil Part Number Ordering Information Part Number ATF-33143-TR1 ATF-33143-TR2 ATF-33143-BLK No. of Devices 3000 10000 100 Container 7" Reel 13" Reel antistatic bag Package Dimensions Outline 43 (SOT-343/SC-70 4 lead) 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E E1 1.30 (.051) 0.55 (.021) TYP 1.15 (.045) BSC e D h 1.15 (.045) REF 0.85 (.033) A b TYP A1 L DIMENSIONS C TYP SYMBOL A A1 b C D E e h E1 L MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm 3Px 3Px 3Px 3Px Tape Dimensions For Outline 4T P P0 D P2 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 8 MAX. K0 5 MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05 SIZE (INCHES) 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.010 0.0005 0.205 0.004 0.0025 0.00004 0.138 0.002 0.079 0.002 PERFORATION CARRIER TAPE COVER TAPE DISTANCE |
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